10:30-20:00

Registration (HOTEL Banyan Tree Tianjin Riverside)

08:30-08:45

Opening Remarks

Chair: Xinyu Liu

08:45-09:00

Conference Overview

Chairs: Tadatomo Suga, Xiaohua Ma

09:00-09:30

(Keynote) Surface Activated Bonding - History, Current Status, and Future outlook

Tadatomo Suga, The University of  Tokyo/Meisei University/IMSI, Japan

09:30-10:00

(Keynote) To be confirmed

Yue Hao（郝跃）

10:00-10:30

(Keynote) Heterogeneous Integration and Packaging  Manufacturing of Chips

Sheng Liu（刘胜）

10:30-10:40

Coffee Break

Plenary Session I: Surface Activated Bonding and Its  Extensions

Chairs: Tadatomo Suga，Fengwen Mu （母凤文）

10:40-11:10

(Keynote) Recent Advances in Atomic Diffusion Bonding: Bonding  Mechanism and Applications

Takehito Shimatsu, Tohoku University, Japan

11:10-11:30

(Invited) Large Area 5J Solar Cells Based on the Direct Bonded  Process

He Wang（王赫），Tianjin Institute of  Power Source

11:30-11:45

Lowering thermal boundary resistance at bonded  heterogeneous interfaces by surface-activated bonding

Rulei Guo（郭汝磊）, The University of  Tokyo

11:45-12:00

N Polar GaN-AlN-Diamond structure fabricated by  modified surface active bonding and selective dry etching

Ye Tian（田野），Institute of  Microelectronics of Chinese Academy of Sciences

12:00-12:15

High Bonding Strength of GaN and  Diamond through Optimization of Bonding Area

Mei Wu（武玫）, Xidian university

12:15-12:30

Research on room-temperature heterogeneous integration technology for  high-power photodetection applications

Xin Chen（陈鑫）, Nanjing Electronic Devices  Institute

12:30-13:30

Lunch

Plenary Session II：Hybrid Bonding and 3D integration

Chairs: Wei Wang（王玮）, Yunwen Wu（吴蕴雯）

13:30-14:00

(Keynote) Flip 3D (F3D): A Novel 3D Integration Technology  Enabled by the Advanced Bonding

Jin Kang/Heng Wu（康劲/吴恒）,  Semiconductor Manufacturing  International Corporation (SMIC)

14:00-14:30

(Keynote) Enabling Technologies and 3D  Integration for Edge AI Microsystems

Chengkuo Lee（李正国）, National University of Singapore

14:30-14:50

(Invited) Low-temperature Cu/SiO₂  and Co/SiO₂ hybrid bonding for high-density interconnection

Chenxi Wang（王晨曦）, Harbin Institute of Technology

14:50-15:10

(Invited) Interface  Investigation for Hybrid Bonding Interconnects

Qidong Wang/Renxi Jing（王启东/金仁喜），Institute of Microelectronics of Chinese Academy of  Sciences

15:10-15:25

3D heterogeneous integration for GaN HEMT and CNTFET

Bowen Zhang（张博文）, Xidian University

15:25-15:40

Coffee Break

Plenary Session III: Novel Low Temperature Bonding  Processes and Materials

Chairs: Guisheng Zou（邹贵生）, Ryo Takigawa

15:40-16:00

(Invited) Spontaneous Formation of SiO₂  Bonding Interface via Polysilazane Conversion

Kai Takeuchi, Tohoku  University, Japan

16:00-16:20

(Invited) Low  Temperature Bonding Based on Electrodeposited Perpendicularly Nanotwinned Cu

Yunwen Wu（吴蕴雯），Shanghai Jiao Tong University

16:20-16:40

(Invited) Low Temperature Nanojoining for  Device Integration

Lei Liu（刘磊），Tsinghua University

16:40-17:00

(Invited) Recent Progress in Ag-In Transient  Liquid Phase Bonding Technologies for Next-Generation Optoelectronic Systems

Yongjuan Huo（霍永隽），Beijing Institute of Technology

17:00-18:00

Poster session

18:00-20:00

Banquet

Plenary Session IV: Power, RF, Photonics, MEMS and  Displays devices Applications (1)

Chairs: Eiji Higurashi, Qian Wang（王谦）

08:30-09:00

(Keynote) Fusion of GaN and SiC for High-Performance Power Devices

Kevin Jing Chen（陈敬）, The Hong  Kong University of Science and Technology

09:00-09:20

(Invited) Room-Temperature Bonding of Polycrystalline Diamond and 3C-SiC and Its  Application in Thermal Management of GaN Power Devices

Jianbo Liang /Naoteru Shigekawa, Osaka Metropolitan University, Japan

09:20-09:40

(Invited) MEMS Heterogeneous Integration Empowers Ultrasonic and  RF Applications

Yansong Yang（杨岩松）, The Hong Kong University of Science and Technology

09:40-09:55

Heterogeneous Substrates for Integrated Photonic Applications

Ailun Yi（伊艾伦）,     Shanghai  Institute of Microsystem and Information Technology,  Chinese Academy of Sciences

09:55-10:10

Research progress of GaN HEMTs on diamond based on wafer bonding  technique

Xingye Zhou（周幸叶）, Hebei Semiconductor Research  Institute

10:10-10:25

High-Performance CMOS-compatible RF GaN-based HEMT technology using  Gold-free Technology

Hao Lu（芦浩）,  Xidian University

10:25-10:40

Coffee Break

Plenary Session V: Fundamental Principles and Characterization

Chairs: Jiandong Ye（叶建东），Fujun Xu（许福军）

10:40-11:10

(Keynote) To be confirmed

Peng Sun（孙鹏）, Wuhan  Xinxin Semiconductor Manufacturing Co., Ltd.（XMC）

11:10-11:30

(Invited) Heterogeneous integration of high-thermal-conductivity silicon carbide

Zhe Cheng（程哲）, Peking  University

11:30-11:50

(Invited) Non-invasive transient thermoreflectance for thermal properties and  temperature characterization

Chao Yuan（袁超），Wuhan  University

11:50-12:05

The Application of Morphological  Measurement Technology in LTB-3D

Aris Ma, AK Optics

12:05-12:20

Application of  Ultrasonic Scanning Technology in Wafer Level Bonding Process

Frank Duan, SBT  Ultrasonic Technology Co.,Ltd.

12:20-13:30

Lunch

Plenary Session VI：Power, RF, Photonics, MEMS and Displays devices  Applications (2)

Chairs: Kevin Jing Chen（陈敬），Qian Sun（孙钱）

13:30-14:00

(Keynote) Wide and Ultrawide Bandgap Semiconductor Electronics: The Importance of  Interfaces

Martin  Kuball, University of Bristol (UK)

14:00-14:30

(Keynote) Surface Activated Room Temperature Bonding for Heterogeneous Photonics  Integration and Packaging

Ryo  Takigawa, Kyushu University, Japan

14:30-14:50

(Invited)　 Power semiconductor and  integration technology

Guoyou Liu（刘国友）, Southwest Jiaotong University/Zhuzhou CRRC Times Electric Co., Ltd

14:50-15:10

(Invited) Heterointegrated Ga₂O₃-on-SiC  RF MOSFETs

Jiandong Ye（叶建东），Nanjing University

15:10-15:30

(Invited) Research progress on  high-performance millimeter wave GaN RF devices

Ling Yang（杨凌）, Xidian  University

15:30-15:45

Coffee Break

Plenary Session VII： Heterogeneous Integration and Related Materials

Chairs: Takehito Shimatsu, Chenxi Wang（王晨曦）

15:45-16:15

(Keynote) Low-Temperature  Bonding Technology for Heterogeneous Integration and Advances in Sensors and  Electronic Devices

Eiji Higurashi, Tohoku University, Japan

16:15-16:35

(Invited) Heterogeneous  integrated materials and devices based on bonding technology

Xin Ou/Tiangui You（欧欣/游天桂）, Shanghai Institute of Microsystem and Information  Technology, Chinese Academy of Sciences

16:35-16:55

(Invited) Investigation of the interfacial bonding strength in  heterogeneously integrated materials

Dong Liu, University of Oxford (UK)

16:55-17:10

N-polar GaN/AlGaN Heterostructures Fabricated by Direct Wafer Bonding with  Polycrystalline Diamond

Qian Li（李倩），Suzhou institute of Nano-Tech and Nano-Bionics, Chinese  Academy of Sciences

17:10-17:25

Low-Temperature  Integration of InP Heterostructure on Silicon via Surface-Activated Bonding  and Selective Wet Etching

Xuezheng Gang（刚学正），Institute of  Microelectronics of Chinese Academy of Sciences

17:25-17:40

Ultrafast planarization of large-scale polycrystalline diamond used for  bonding by microsecond laser

Jinxin Zou（邹金鑫）, University of Science and Technology Beijing

17:40-19:00

Reception